Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures

نویسندگان

  • Evgeny Pikhay
  • Yakov Roizin
  • Yael Nemirovsky
چکیده

In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sensors. The developed devices are intended for total ionizing dose (TID) measurements and fabricated in a standard CMOS process flow. Sensor design and operation is discussed in detail. Original array sensors were suggested and fabricated that allowed high statistical significance of the radiation measurements and radiation imaging functions. Single sensors and array sensors were analyzed in combination with the specially developed test structures. This allowed insight into the physics of sensor operations and exclusion of the phenomena related to material degradation under irradiation in the interpretation of the measurement results. Response of the developed sensors to various sources of ionizing radiation (Gamma, X-ray, UV, energetic ions) was investigated. The optimal design of sensor for implementation in dosimetry systems was suggested. The roadmap for future improvement of sensor performance is suggested.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Programming Floating-Gate Circuits with UV-Activated Conductances

A programming technique for controlling the floating gates (FG) in ultra low-voltage (ULV) floating-gate circuits is presented. Simple ultra low-voltage floatinggate current scaling and level shifting circuits are discussed. The current scaling and level shifting are accomplished using only minimum sized transistors and floating capacitors. Floating-gate current multiplier and divider circuits ...

متن کامل

Design of Gate-Driven Quasi Floating Bulk OTA-Based Gm–C Filter for PLL Applications

The advancement in the integrated circuit design has developed the demand for low voltage portable analog devices in the market. This demand has increased the requirement of the low-power RF transceiver. A low-power phase lock loop (PLL) is always desirable to fulfill the need for a low power RF transceiver. This paper deals with the designing of the low power transconductance- capacitance (Gm-...

متن کامل

Ultra Low-Voltage Floating-Gate Transconductance Amplifiers

Ultra low-voltage (ULV) floating-gate (FG) differential amplifiers are presented. In this paper we present several different approaches to CMOS ULV amplifier design. Sinh-shaped and tanh-shaped transconductance amplifiers are described. Measured results are provided. Keywords— Floating-gate, low-voltage, low-power, lowvoltage amplifiers, analog floating-gate circuits.

متن کامل

Proposal for a Ultra Low Voltage NAND gate to withstand Power Analysis Attacks

In this paper we promote the Ultra Low Voltage (ULV) NAND gate to replace either partly or entirely the encryption block of a design to withstand power analysis attack. Keywords—Differential Power Analysis (DPA), Low Voltage (LV), Ultra Low Voltage (ULV), Floating-Gate (FG) and supply current analysis.

متن کامل

Low-Voltage Ultra-Low-Power Current Conveyor Based on Quasi-Floating Gate Transistors

The field of low-voltage low-power CMOS technology has grown rapidly in recent years; it is an essential prerequisite particularly for portable electronic equipment and implantable medical devices due to its influence on battery lifetime. Recently, significant improvements in implementing circuits working in the low-voltage lowpower area have been achieved, but circuit designers face severe cha...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2017